Parallel spiral stacked inductor on semiconductor material

Parallel spiral stacked inductor on semiconductor material

A parallel spiral stacked inductor [100] and manufacturing method therefore is provided. A substrate [112] has a plurality of turns [124,124',126,126'] in a plurality of levels, the plurality of turns [124,124',126,126'] having a center proximate and a center distal ends. First v...

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Bibliographische Detailangaben
Hauptverfasser: SEE, ALEX, SWE, TOE NAING, SIA, CHOON-BENG, YEO, KIAT SENG, NG, CHEN YEOW
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
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Zusammenfassung:A parallel spiral stacked inductor [100] and manufacturing method therefore is provided. A substrate [112] has a plurality of turns [124,124',126,126'] in a plurality of levels, the plurality of turns [124,124',126,126'] having a center proximate and a center distal ends. First vias [132v] connecting the center proximate ends of the plurality of turns [124,124',126,126'] and second vias [133] connecting the center distal ends of the plurality of turns [124,124',126,126']. A first connecting portion [130] connects to the center proximate ends of the plurality of turns [124,124',126,126'] and a second connecting portion [134] connecting to the center distal end of the plurality of turns [124,124',126,126']. A dielectric material [114,116,118,120] contains the inductor [122].