Highly heat-resistant plasma etching electrode and dry etching device including the same

It is an object of the present invention to provide a plasma etching electrode which is prevented from being contaminated with an impurity, secures good thermal and electrical conductance and heat resistance at the joint (10) between the electrode plate (8) and pedestal (or supporting ring) (9), and...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAGUCHI, AKIRA, TOMITA, SHUJI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS DYES ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PLASMA TECHNIQUE POLISHES PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS USE OF MATERIALS AS ADHESIVES
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Beschreibung
Zusammenfassung:	It is an object of the present invention to provide a plasma etching electrode which is prevented from being contaminated with an impurity, secures good thermal and electrical conductance and heat resistance at the joint (10) between the electrode plate (8) and pedestal (or supporting ring) (9), and hence improves the etching characteristics and silicon wafer yield. It is another object to provide the dry etching device including the same. The present invention provides a highly heat-resistant plasma etching electrode, comprising an electrode plate of silicon (8) supported by and fast, uniformly joined to a pedestal (9) by an adhesive agent, wherein (a) the pedestal is made of graphite, and (b) an epoxy resin containing polycarbodiimide resin and carbon powder are used for the adhesive agent, and also provides the dry etching device including the same.