Asymmetric InGaAsN vertical cavity surface emitting lasers

Asymmetric InGaAsN vertical cavity surface emitting lasers

Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.

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Hauptverfasser: TAN, MICHAEL R. T, LEARY, MICHAEL H, TAKEUCHI, TETSUYA, BOUR, DAVID P, CHANG, YING-LAN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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creator TAN, MICHAEL R. T
LEARY, MICHAEL H
TAKEUCHI, TETSUYA
BOUR, DAVID P
CHANG, YING-LAN
description Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title Asymmetric InGaAsN vertical cavity surface emitting lasers
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