Asymmetric InGaAsN vertical cavity surface emitting lasers

Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.

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Bibliographische Detailangaben
Hauptverfasser:	TAN, MICHAEL R. T, LEARY, MICHAEL H, TAKEUCHI, TETSUYA, BOUR, DAVID P, CHANG, YING-LAN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.