Molecularly controlled dual gated field effect transistor for sensing applications

A sensing device comprising a sensing layer (1) having at least one functional group that binds to the semi-conducting channel layer (3) and at least another functional group that serves as a sensor, a semi-conducting channel layer (3) having a first surface (A) and a second surface (B), which is opposite to said surface (A), a drain electrode (6), a source electrode (5), a gate electrode (4), characterised in that said source electrode (5), said drain electrode (6) and said gate electrode (4) are placed on the first surface (A) of said semi-conducting channel layer (3) and that said sensing layer (1) is on the surface (B) of said semi-conducting channel layer (3), said sensing layer being in contact with the semi-conducting channel layer and said semi-conducting channel layer having a thickness below 5000nm.