Method and apparatus for batch processing of wafers in a furnace
A method and apparatus for batch processing of semiconductor wafers in a furnace advantageously allow for wafers (160) to be supported for processing at very high temperatures (e.g., about 1350 DEG C). Each wafer (160) is supported during processing by a wafer support (140) with full perimeter suppo...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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