Method and apparatus for batch processing of wafers in a furnace

A method and apparatus for batch processing of semiconductor wafers in a furnace advantageously allow for wafers (160) to be supported for processing at very high temperatures (e.g., about 1350 DEG C). Each wafer (160) is supported during processing by a wafer support (140) with full perimeter suppo...

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Bibliographische Detailangaben
Hauptverfasser: DEN HARTOG, EDWIN, VAN DEN BERG, JANNES REMCO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
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