Method and apparatus for batch processing of wafers in a furnace

A method and apparatus for batch processing of semiconductor wafers in a furnace advantageously allow for wafers (160) to be supported for processing at very high temperatures (e.g., about 1350 DEG C). Each wafer (160) is supported during processing by a wafer support (140) with full perimeter support, such as a ring or plate. The wafers, on their supports, are removable and vertically spaced apart in a wafer support holder. A transfer station (143) is provided wherein, during loading, a wafer (160) is placed on a wafer support (140) and, during unloading, the wafer (160) is separated from the wafer support (140). A FOUP (Front Opening Unified Pod) (100) is adapted to accommodate a plurality of wafer supports (140) and to accommodate the transfer station (143). The wafer support (140), with a wafer (160) supported on it, is transferred from the transfer station (143) to a wafer support holder for processing.