Process for etching a conductive layer

Chemical etching of an electrically conductive doped metal oxide layer (2) on a transparent glass substrate (1) comprises depositing a mask (3) on the layer and contacting the unmasked regions (2') with an acidic pH solution and then spraying with zinc, or contacting the unmasked regions (2') with an alkaline pH solution and then spraying with aluminum. The zinc or aluminum are in powder form. Preferred Features: The powder-form zinc or aluminum (4) is sprayed onto the layer (2) in liquid or fluid phase or as an aerogel, especially in suspension in one or more organic and/or aqueous solvents (5) optionally containing aerosil-type rheology-modifying additives. The acidic pH solution comprises at least one aqueous, alcoholic or aqueous alcoholic solvent and a strong HCl-type acid, and optionally surfactants. The amount of acid in the acidic pH solution is 1-20, especially 1-10, mass %. Contact of the solution with the layer to be etched is achieved by immersion or spraying. Cleaning and removal of the mask are carried out after etching. Cleaning involves rinsing or spraying the layer (2) with, or immersion of the substrate (1) into a water-based or organic solvent-based solution. Removal of the mask (3) can be achieved by dissolution in a suitable solvent, especially an organic solvent, or by ultrasound treatment, or by softening and mechanical peeling, or by a flat jet of warm air, or by thermal treatment, especially at the same time as thermal treatment of the substrate (1) and/or the layer(s) it covers. The doped metal oxide layers are especially tin oxide doped with fluorine, arsenic or antimony, or tin-doped indium oxide (ITO). An Independent claim is given for utilization of the invented process in the fabrication of electrodes/conductive elements in the glass industry, notably electrically heated glass, aerial glass in the electronics industry, notably for flat displays such as plasma displays, or for touch screens in the photovoltaic cell industry.