Precursors for zirconium and hafnium oxide thin film deposition

A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and hydrocarbon solvent such as benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing t...

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Bibliographische Detailangaben
Hauptverfasser: ZHUANG, WEI-WEI, EVANS, DAVID RUSSELL
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and hydrocarbon solvent such as benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200°C in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.