MEMORY ELEMENT AND METHOD FOR PRODUCTION OF A MEMORY ELEMENT

A memory element with organic material comprises two metallised layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between the first line and the second line, which overlaps the first l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	RÖSNER, WOLFGANG, HOFMANN, FRANZ, LUYKEN, RICHARD, JOHANNES
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TRANSPORTING
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Beschreibung
Zusammenfassung:	A memory element with organic material comprises two metallised layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between the first line and the second line, which overlaps the first line partially and completely overlaps the second line. The channels are filled with a filling material, the electrical conductivity of which may be altered by an applied electrical voltage.