Lateral power MOSFET

Lateral power MOSFET

A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate (28,28A,28B) is coupled to a further gate electrode layer (25) through contacts (31,33,34) at a plurality of locations. The source electrode (21) includes first (21A) and se...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GRABOWSKI, WAYNE BRYAN, DISNEY, DONALD RAY
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate (28,28A,28B) is coupled to a further gate electrode layer (25) through contacts (31,33,34) at a plurality of locations. The source electrode (21) includes first (21A) and second (21B) segments. The first segment (21A) is interposed between the drain electrode (22A) and the gate electrode layer (25), has no direct contact to the source region (44), does not carry a significant amount of source current, and acts as a field plate.