SILICON ON INSULATOR LOGIC CIRCUIT UTILIZING DIODE SWITCHING ELEMENTS

SILICON ON INSULATOR LOGIC CIRCUIT UTILIZING DIODE SWITCHING ELEMENTS

A logic circuit is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. The logic circuit both SOI field effect transitors (FETs) and SOI diodes to provide for reduced size of the logic circuit and reduced power consumption when the logi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: GIESEKE, BRUCE, ALAN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A logic circuit is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. The logic circuit both SOI field effect transitors (FETs) and SOI diodes to provide for reduced size of the logic circuit and reduced power consumption when the logic circuit is in operation. A method of performing certain logic function is also provided.