ATMOSPHERIC PROCESS AND SYSTEM FOR CONTROLLED AND RAPID REMOVAL OF POLYMERS FROM HIGH DEPTH TO WIDTH ASPECT RATIO HOLES

A hot arc-type plasma generating system is described to etch a polymer (44) on a substrate (10) used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes (40), that can include trenches, greater than about 10 to 1 an...

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Bibliographische Detailangaben
Hauptverfasser:	TOKMOULINE, ISKANDER, BOLLINGER, LYNN, DAVID
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A hot arc-type plasma generating system is described to etch a polymer (44) on a substrate (10) used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes (40), that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.