PHOTOLITHOGRAPHY METHOD, PHOTOLITHOGRAPHY MASK BLANKS, AND METHOD OF MAKING

The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavel...

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Bibliographische Detailangaben
Hauptverfasser:	PRIESTLEY, RICHARD, S, YU, CHUNZHE, C, SEMPOLINSKI, DANIEL, R
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GLASS HOLOGRAPHY JOINING GLASS TO GLASS OR OTHER MATERIALS MATERIALS THEREFOR METALLURGY MINERAL OR SLAG WOOL ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS
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Beschreibung
Zusammenfassung:	The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavelengths in the 248 nm region and the 193 nm region. The invention provides improved production of lithography patterns by inhibiting polarization mode dispersion of lithography light utilizing low birefringence mask blanks and photomasks.