IMAGE CELL, IMAGE SENSOR AND PRODUCTION METHOD THEREFOR

The invention relates to an image cell (10) which is constructed using semiconductor technology and which is provided for converting electromagnetic radiation (50) striking a surface of the image cell into an electric signal. The image cell comprises a radiation-sensitive element (18) that has first region (14) located close to the surface and a doped second region (16) located at a distance from the surface, whereby the second region borders the first region. The inventive image cell also comprise a semiconductor element (30) which has at least one doped third region (22, 24) located close to the surface and a doped fourth region (28) located at a distance from the surface, whereby the fourth region borders the third region. According to the invention, the dimension (d1) of the second region extending in the direction perpendicular to the surface is greater than the corresponding dimension (d2) of the fourth region. Due to this measure, the radiation portions of long wavelengths also contribute to the photocurrent in the radiation-sensitive element, whereby increasing the sensitivity of the photocell.