VOLTAGE-PROTECTED SEMICONDUCTOR BRIDGE IGNITER ELEMENTS

A semiconductor bridge igniter device (10) having integral voltage anti-fuse protection provides an electric circuit including a first firing leg and, optionally, a monitor leg. The first firing leg includes a first semiconductor bridge having semiconductor pads (14a, 14b) separated and connected by a bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b) so that an electrical potential applied across the metallized lands (16a, 16b) will cause sufficient current to flow through the firing leg of the electric circuit to release energy at the bridge (14c). A dielectric layer (15) is interposed within the first firing leg and has a breakdown voltage equal to a selected threshold voltage (Vth) and therefore provides protection against the device functioning at voltages below the threshold voltage (Vth). A continuity monitor leg of the electric circuit is comprised of either a fusible link (34) or a resistor (36) disposed in parallel to the first firing leg. A second firing leg may be provided which includes a second semiconductor bridge formed similar to the first semiconductor bridge although being mounted to receive a reverse polarity voltage from that of the first semiconductor bridge in order to reduce variations in firing voltage. A capacitor may be employed in parallel with the first firing leg in order to, e.g., reduce the effects of static electricity.