Integrated power oscillator RF source for plasma immersion ion implantation system

A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber (20). An oscillator (80) is operatively coupled to an antenna (30a) for igniting a plasma (94) within the processing chamber (20). The plasma (94) and ant...

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Bibliographische Detailangaben
Hauptverfasser:	RYAN, KEVIN THOMAS, DIVERGILIO, WILLIAM FRANK, KELLERMAN, PETER LAWRENCE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber (20). An oscillator (80) is operatively coupled to an antenna (30a) for igniting a plasma (94) within the processing chamber (20). The plasma (94) and antenna (30a) form a resonant circuit (90a) with the oscillator (80), and the oscillator (80) varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.