Mesa geometry semiconductor light emitter having chalcogenide dielectric coating

In a mesa geometry semiconductor laser, a patterned dielectric coating (16) used to define the stripe geometry contact on the top the mesa and to provide significant waveguiding comprises a chalcogenide glass. Applications to intersubband (e.g., quantum cascade) lasers are specifically described.

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Bibliographische Detailangaben
Hauptverfasser: HWANG, HAROLD YOONSUNG, TREDICUCCI, ALESSANDRO, YI CHO, ALFRED, GMACHL, CLAIRE, SERGENT, ARTHUR MIKE, CAPASSO, FEDERICO, PAIELLA, ROBERTO, SIVCO, DEBORAH LEE, BAILLARGEON, JAMES NELSON, HUTCHINSON, ALBERT LEE
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:In a mesa geometry semiconductor laser, a patterned dielectric coating (16) used to define the stripe geometry contact on the top the mesa and to provide significant waveguiding comprises a chalcogenide glass. Applications to intersubband (e.g., quantum cascade) lasers are specifically described.