METHOD FOR A TUNGSTEN SILICIDE ETCH

METHOD FOR A TUNGSTEN SILICIDE ETCH

A tungsten silicide etch process allows for a high etch rate and about 90° sidewall profiles of etched features. According to an example embodiment, a substrate is placed into an etch zone and a process gas comprising SF6, He, HBr, and a chlorine-containing gas is introduced in the etch zone. A plas...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: BOWLING, STEVEN, KIRK
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A tungsten silicide etch process allows for a high etch rate and about 90° sidewall profiles of etched features. According to an example embodiment, a substrate is placed into an etch zone and a process gas comprising SF6, He, HBr, and a chlorine-containing gas is introduced in the etch zone. A plasma is generated in the etch zone to form an etch gas from the process gas that anisotropically etches the tungsten silicide layer.