SEMICONDUCTOR ELEMENT WITH A TUNGSTEN OXIDE LAYER AND METHOD FOR ITS PRODUCTION

SEMICONDUCTOR ELEMENT WITH A TUNGSTEN OXIDE LAYER AND METHOD FOR ITS PRODUCTION

A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative premittivity of the tungsten oxide layer is higher than 50.

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Bibliographische Detailangaben
Hauptverfasser: TEWS, HELMUT, WURZER, HELMUT, DRESCHER, DIRK, SCHREMS, MARTIN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative premittivity of the tungsten oxide layer is higher than 50.