METHOD AND DEVICE FOR COMPENSATING WAFER BIAS IN A PLASMA PROCESSING CHAMBER

Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias c...

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Bibliographische Detailangaben
Hauptverfasser: KNOP, ROBERT, E, OLSON, CHRISTOPHER, H, NGO, TUAN, M, SCHOEPP, ALAN, M, BARNES, MICHAEL, S
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.