METHOD OF MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE

A method of manufacturing a magnetic tunnel junction device, in which a stack ( 1 ) comprising two electrode layers ( 3, 7 ) and a barrier layer ( 5 ) extending in between is formed. One of the electrode layers is structured by means of etching, in which, during etching, a part of this layer is made...

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Bibliographische Detailangaben
1. Verfasser:	VAN ZON, JOANNES, B., A., D
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TESTING TRANSFORMERS
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Beschreibung
Zusammenfassung:	A method of manufacturing a magnetic tunnel junction device, in which a stack ( 1 ) comprising two electrode layers ( 3, 7 ) and a barrier layer ( 5 ) extending in between is formed. One of the electrode layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer ( 7 r) remains. This rest layer is subsequently removed by means of physical etching, in which at least substantially charged particles have a motion energy which is between the sputtering threshold of the magnetic material of the rest layer and the sputtering threshold of the non-magnetic material of the barrier layer. In the relevant method, it is prevented that the electrode layer which is not to be structured is detrimentally influenced during structuring of the other electrode layer.