METHOD OF MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE

A method of manufacturing a magnetic tunnel junction device, in which a stack ( 1 ) comprising two magnetic layers ( 3, 7 ) and a barrier layer ( 5 ) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made t...

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Bibliographische Detailangaben
Hauptverfasser:	ADELERHOF, DERK, J, VAN ZON, JOANNES, B., A., D, COEHOORN, REINDER
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TESTING TRANSFORMERS
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Beschreibung
Zusammenfassung:	A method of manufacturing a magnetic tunnel junction device, in which a stack ( 1 ) comprising two magnetic layers ( 3, 7 ) and a barrier layer ( 5 ) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer ( 7 r) remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.