Article comprising a dielectric material of Zr-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same

The invention relates to dielectric materials comprising films of R-Ge-Ti-O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula Rx-Gey-Tiz-Ow where .05 ≥ x ≤ 1, .05 ≥ y ≤ 1, 0.1 ≥ z ≤ 1, and 1 ≥ w ≤ 2, and x+y+z SIMILAR 1, and mor...

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Bibliographische Detailangaben
Hauptverfasser:	SCHNEEMEYER, LYNN FRANCES, VAN DOVER, ROBERT BRUCE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to dielectric materials comprising films of R-Ge-Ti-O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula Rx-Gey-Tiz-Ow where .05 ≥ x ≤ 1, .05 ≥ y ≤ 1, 0.1 ≥ z ≤ 1, and 1 ≥ w ≤ 2, and x+y+z SIMILAR 1, and more preferably, where .15 ≥ x ≤ 0.7, .05 ≥ y ≤ 0.3, 0.25 ≥ z ≤ 0.7, and 1.95 ≥ w ≤ 2.05, and x+y+z SIMILAR 1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.