METHOD FOR PRODUCING SCHOTTKY DIODES

A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material, especially made of platinum, on the surface of the semiconductor layer. The surface is provided with a structur...

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Bibliographische Detailangaben
Hauptverfasser:	LOSEHAND, REINHARD, WERTHMANN, HUBERT
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material, especially made of platinum, on the surface of the semiconductor layer. The surface is provided with a structured masking layer beforehand, and which is subsequently etch-backing.