PROTECTIVE MEMBER FOR INNER SURFACE OF CHAMBER AND PLASMA PROCESSING APPARATUS

An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. The hollow pro...

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Bibliographische Detailangaben
Hauptverfasser:	KAZAMA, KOICHI, HAINO, KAZUYOSHI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. The hollow protection member for protecting the inner wall of a plasma processing chamber is integrally formed of glass-like carbon materials with a volume resistivity of 1 x 10 OMEGA .cm or less and a thermal conductivity of 5W/m.K or more. The protection member preferably has a thickness of 4 mm or more and the average surface roughness (Ra) of the inside of the hollow structure is preferably 2.0 mu m or less. The plasma processing apparatus is configured so that the inner wall protection member having the above characteristics is arranged along the inner wall of the chamber of the plasma processing apparatus, wherein the inner wall of the chamber and the protection member are electrically connected and the chamber is grounded.