Method and apparatus for cleaning workpiece

A semiconductor wafer (1) is scrubbed by a cleaning member (3) made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores has an average diameter ranging from 10 to 200 mu m. The cleaning member (3) may be made of either polyurethane foam or...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	AOKI, RIICHIRO, ONO, KOJI, KOUNO, GISUKE, MAEKAWA, TOSHIRO, MISHIMA, SHIRO, KODERA, MASAKO, OKADA, MOTOAKI, TAKAHASHI, TAMAMI, SHIGETA, ATSUSHI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A semiconductor wafer (1) is scrubbed by a cleaning member (3) made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores has an average diameter ranging from 10 to 200 mu m. The cleaning member (3) may be made of either polyurethane foam or non-woven fabric composed of fibers bound together by urethane resin. Particles that are strongly attached to the surface of a substrate such as a semiconductor wafer can easily be removed by scrubbing. At the same time a substrate is cleaned, surface irregularities and crystalline protrusions on the surface of a substrate such as a semiconductor wafer can be scraped off to adjust the surface roughness of the semiconductor wafer to a desired degree for making the semiconductor wafer surface flat.