Single crystal SiC composite material for producing a semiconductor device and a method of producing the same

In a single crystal SiC composite material for producing a semiconductor device, and a method of producing the same according to the invention, a single crystal SiC film 2 which is produced on an Si substrate by the heteroepitaxial growth method and obtained by removing the Si substrate is stacked and bonded via a film-like SiO2 layer 4 onto the surface of a polycrystalline plate 3 consisting of Si and C atoms in a closely contacted manner, and the composite member 6 is then heat-treated, whereby single crystal SiC in which the crystal is transformed in the same orientation as the single crystal of the single crystal SiC film 2 is integrally grown on the polycrystalline plate 3. The thickness and the strength which are requested for producing a semiconductor device can be ensured, and lattice defects and micropipe defects seldom occur, so that an accurate and high-quality semiconductor device can be produced.