Magnetic garnet single crystal and faraday rotator using the same

The present invention relates to a magnetic garnet single crystal and a Faraday rotator using the magnetic garnet single crystal and the object of the present invention is to provide a magnetic garnet single crystal which suppresses a generation of crystal defects and a Faraday rotator which improve...

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Bibliographische Detailangaben
Hauptverfasser:	YAMASAWA, KAZUHITO, OOIDO, ATSUSHI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRICITY INDUCTANCES MAGNETS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSFORMERS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a magnetic garnet single crystal and a Faraday rotator using the magnetic garnet single crystal and the object of the present invention is to provide a magnetic garnet single crystal which suppresses a generation of crystal defects and a Faraday rotator which improves an extinction ratio. A magnetic garnet single crystal grown by a liquid-phase epitaxial growth method and having the general formula represented by BiaPbbA3-a-bFe5-c-dBcPtdO12 is used, wherein A is at least one kind of element selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, B is at least one kind of element selected from Ga, Al, Sc, Ge and Si, and a, b, c and d are represented by 0 < a < 3.0, 0 < b