METHOD AND DEVICE FOR CUTTING AND MIRROR FINISHING SINGLE CRYSTAL SILICON CARBIDE

The present invention comprises: a metal bond grind stone having a flat plate portion 10a and a tapered portion 10b; an electrode 13 opposed to the metal bond grind stone with a gap therebetween; voltage applying means 12 for applying a direct-current pulse voltage between the metal bond grind stone...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	YANO, KOTARO, OHMORI, HITOSHI, YAMAGATA, YUTAKA, NAGATO, NOBUYUKI, ITOH, NOBUHIDE, OYANAGI, NAOKI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:	The present invention comprises: a metal bond grind stone having a flat plate portion 10a and a tapered portion 10b; an electrode 13 opposed to the metal bond grind stone with a gap therebetween; voltage applying means 12 for applying a direct-current pulse voltage between the metal bond grind stone and the electrode; conductive liquid supplying means 14 for supplying a conductive liquid 15 between the metal bond grind stone and the electrode; and grind stone moving means 16 for moving the metal bond grind stone in a direction orthogonal to the shaft center thereof, and an ingot 1 of a single crystal SiC is thereby cut at the tapered portion 10b of the metal bond grind stone and the cut surface is then specular-worked at the flat plate portion 10a.