Enhancing adhesion of deposits on exposed surfaces in process chamber

The invention provides an apparatus for fabricating semiconductor devices. The apparatus comprises a process chamber enclosing an interior region and a mechanical component having an exposed surface in the interior of the chamber, wherein, said surface includes a plurality of topographical features...

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Bibliographische Detailangaben
Hauptverfasser:	LUSCHER, PAUL, SALIMIAN, SIAMAK, VAIDYA, KAUSHIK, PU, BRYAN Y, LEE, EVANS Y
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides an apparatus for fabricating semiconductor devices. The apparatus comprises a process chamber enclosing an interior region and a mechanical component having an exposed surface in the interior of the chamber, wherein, said surface includes a plurality of topographical features distributed across the surface. Each topographical feature has a height in the range of 0.1 to 100 mm and a width in the range of 0.1 to 100 mm and adjacent topographical features are separated by a spacing in the range of 0.1 to 100 mm.