SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR COMPONENT

A semiconductor includes a buried conducting layer, such as a buried collector, comprises a trench, the walls of which are covered with a layer of a material in which dopant ions diffuse faster than in monocrystalline silicon. A contact area is doped in close proximity to the trench wall. The dopant...

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Bibliographische Detailangaben
Hauptverfasser:	SOEDERBAERG, ANDERS, SJOEDIN, H KAN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor includes a buried conducting layer, such as a buried collector, comprises a trench, the walls of which are covered with a layer of a material in which dopant ions diffuse faster than in monocrystalline silicon. A contact area is doped in close proximity to the trench wall. The dopants will diffuse through the layer and form a low resistance connection to the buried layer. The layer may comprise polysilicon or porous silicon, or a silicide. If the material used in the layer is not in itself conducting, the size of the component may be significantly reduced.