Process for coating plastic substrates

Oxidant gas first cleans the substrate, inert gas is then admitted for a cross-linking stage. An oxidant gas is introduced with a silicon-organic compound, to apply a barrier layer. In the next stage, an underlayer including a UV-absorber is applied. An oxidant gas, a silicon-organic compound and a...

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Bibliographische Detailangaben
Hauptverfasser:	GRUENWALD, HEINRICH, DICKEN, WILFRIED, NAUENBURG, KLAUS, SCHULTE, THOMAS, BECKMANN, RUDOLF
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON DIFFUSION TREATMENT OF METALLIC MATERIAL GENERAL PROCESSES OF COMPOUNDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS PHYSICS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP
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Beschreibung
Zusammenfassung:	Oxidant gas first cleans the substrate, inert gas is then admitted for a cross-linking stage. An oxidant gas is introduced with a silicon-organic compound, to apply a barrier layer. In the next stage, an underlayer including a UV-absorber is applied. An oxidant gas, a silicon-organic compound and a UV-absorbing compound are introduced. The oxidant gas ratio is raised from zero to unity in stages and/or is raised with pauses, to about 10-1. The plasma is continuous or pulsed. The scratch-resistant layer is added, again admitting oxidant gas and a silicon-organic compound into the process chamber. In a final stage, a low-friction layer is applied, for which an inert gas and a silicon-organic or a fluorocarbon compound are introduced. Two similar preferred variants of the method, based on the foregoing principles, are described.