Method for forming a dram capacitor and capacitor made thereby

An integrated DRAM cell comprises a DRAM capacitor and a transistor. The capacitor (17,18,20) of the cell is formed in a first well (16) in a dielectric layer (13) overlying the cell transistor. The top electrode (20) of the capacitor also serves as a barrier layer between an underlying plug (15) in...

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Bibliographische Detailangaben

1. Verfasser:	CHOI, SEUNGMOO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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