Semiconductor interconnect structure employing a pecvd inorganic dielectric layer and process for making same

Semiconductor interconnect structure employing a pecvd inorganic dielectric layer and process for making same

An inorganic dielectric anti-reflective coating (ARC) layer used in semiconductor interconnect structures for facilitating the use of thin photoresist layers while preserving the integrity of the photoresist pattern (304, 306, 308) for deep sub-micron feature sizes. The inorganic dielectric ARC laye...

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Bibliographische Detailangaben
Hauptverfasser: BRONGO, MAUREEN R, HSIA, SHAO-WEN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An inorganic dielectric anti-reflective coating (ARC) layer used in semiconductor interconnect structures for facilitating the use of thin photoresist layers while preserving the integrity of the photoresist pattern (304, 306, 308) for deep sub-micron feature sizes. The inorganic dielectric ARC layer also functions as a hard mask during metal etching thereby further enhancing the integrity of metallic microelectronic structures.