Semiconductor component with at least a capacitor having a resistance element and its fabrication process

A semiconductor component, has a capacitor (3) connected in parallel with a resistive element (5) of lower resistance than the capacitor dielectric (34). A semiconductor component has: (a) a capacitor (3) comprising a metal oxide layer (34) in which a remnants electric polarization is induced by a preselected voltage difference between the capacitor electrodes (32, 36); and (b) a resistive element (5) which has a predetermined resistance lower than that of the metal oxide layer (34) and which is electrically connected between the electrodes (32, 36). An Independent claim is also included for production of the above semiconductor component. Preferred Features: The resistive element (5) has a resistance of 1 M OMEGA to 100 G OMEGA , especially 10-100 M OMEGA , and consists of polysilicon, a conductive nitride, a silicide or a doped region of the metal oxide layer (34).