PHOTORESIST DEVELOPER AND METHOD OF DEVELOPMENT
An aqueous photolithographic resist developer composition including a metal alkali, a dialkylalkanolamine adjuvant, a surfactant, and a buffer increases the speed of novolak resin-based resists exposed to high energy radiation to permit high resolution photolithographic patterning of the resist. A m...
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| creator | TAN, ZOILO, CHENG, HO |
| description | An aqueous photolithographic resist developer composition including a metal alkali, a dialkylalkanolamine adjuvant, a surfactant, and a buffer increases the speed of novolak resin-based resists exposed to high energy radiation to permit high resolution photolithographic patterning of the resist. A multi-cycle process, in combination with the developer composition of this invention, enables resist resolution capabilities of less than 0.20 mu m, with contrast >5, and dark loss less than 10%. |
| format | Patent |
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A multi-cycle process, in combination with the developer composition of this invention, enables resist resolution capabilities of less than 0.20 mu m, with contrast >5, and dark loss less than 10%.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000412&DB=EPODOC&CC=EP&NR=0991983A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000412&DB=EPODOC&CC=EP&NR=0991983A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAN, ZOILO, CHENG, HO</creatorcontrib><title>PHOTORESIST DEVELOPER AND METHOD OF DEVELOPMENT</title><description>An aqueous photolithographic resist developer composition including a metal alkali, a dialkylalkanolamine adjuvant, a surfactant, and a buffer increases the speed of novolak resin-based resists exposed to high energy radiation to permit high resolution photolithographic patterning of the resist. A multi-cycle process, in combination with the developer composition of this invention, enables resist resolution capabilities of less than 0.20 mu m, with contrast >5, and dark loss less than 10%.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAP8PAP8Q9yDfYMDlFwcQ1z9fEPcA1ScPRzUfB1DfHwd1Hwd4OJ-7r6hfAwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXAANLS0NLC2NHQ2MilAAA2Lwl4g</recordid><startdate>20000412</startdate><enddate>20000412</enddate><creator>TAN, ZOILO, CHENG, HO</creator><scope>EVB</scope></search><sort><creationdate>20000412</creationdate><title>PHOTORESIST DEVELOPER AND METHOD OF DEVELOPMENT</title><author>TAN, ZOILO, CHENG, HO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0991983A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2000</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>TAN, ZOILO, CHENG, HO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAN, ZOILO, CHENG, HO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTORESIST DEVELOPER AND METHOD OF DEVELOPMENT</title><date>2000-04-12</date><risdate>2000</risdate><abstract>An aqueous photolithographic resist developer composition including a metal alkali, a dialkylalkanolamine adjuvant, a surfactant, and a buffer increases the speed of novolak resin-based resists exposed to high energy radiation to permit high resolution photolithographic patterning of the resist. A multi-cycle process, in combination with the developer composition of this invention, enables resist resolution capabilities of less than 0.20 mu m, with contrast >5, and dark loss less than 10%.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | PHOTORESIST DEVELOPER AND METHOD OF DEVELOPMENT |
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