Short-circuit resistant IGBT module

A power semiconductor module comprises a conductive layer (7) which can form a lower melting compound or alloy with the semiconductor material of a chip (4). A power semiconductor module comprises a housed semiconductor chip (4) with two main electrodes (5, 6), the first (5) of which is in electrical contact with a substrate (2) and the second (6) of which is in electrical contact with a contact punch (3). An electrically conductive layer (7) is provided between a main electrode and the substrate or the punch and comprises a material which forms, with the semiconductor material, a compound or alloy of melting point below that of the semiconductor material. Preferred Features: The conductive layer is a solder foil or paste especially of Al, Ag, Au, Cu and/or Mg when the semiconductor material is Si. The chip is an IGBT or a diode.