HIGH FREQUENCY SEMICONDUCTOR LASER MODULE

HIGH FREQUENCY SEMICONDUCTOR LASER MODULE

The invention is directed to a high-frequency semiconductor laser module with a silicon substrate, especially made of low-impedance silicon, a laser diode arranged thereon, and at least two lines for the H-F feed, one of which is insulated from the silicon substrate by a dielectric layer. According...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KUKE, ALBRECHT, HAUER, HEINER, MOESS, EBERHARD
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Beschreibung
Zusammenfassung:The invention is directed to a high-frequency semiconductor laser module with a silicon substrate, especially made of low-impedance silicon, a laser diode arranged thereon, and at least two lines for the H-F feed, one of which is insulated from the silicon substrate by a dielectric layer. According to the invention, the laser diode is arranged on the silicon substrate via a metallic mounting layer, and the H-F line is guided close to the laser diode on the dielectric layer.