Manufacturing process for semiconductor wafer

The present invention has an object to provide a manufacturing process of a semiconductor wafer in which improvement on accuracy in a chamfering portion is realized. The manufacturing process of a semiconductor wafer comprises: a slicing step of obtaining a wafer in the shape of a thin disk by slicing a single crystal ingot; a surface-grinding step of flattening a surface of the wafer; a chamfering step of chamfering the peripheral edge portions; and a mirror-polishing step of mirror-polishing the surface of the wafer, wherein a simultaneous double-side surface-grinding step of grinding both sides of the wafer simultaneously by means of a double-side grinding machine is existent prior to the chamfering step in order to remove wafer waviness and a secondary grinding step is performed by grinding a single side or simultaneously both sides of the wafer after the chamfering step is carried out, so that improvement on accuracy in a chamfered portion is realized.