CVD/PVD method of filling structures using discontinuous CVD Al liner

Improved methods for forming metal-filled structures in openings (100) on substrates for integrated circuit devices are obtained by the formation of a discontinuous metal liner (18) by CVD in an opening (100) to be filled. The discontinuous metal liner (18) surprisingly provides wetting equivalent to or better than continuous layer CVD liners. The CVD step is followed by depositing a further amount of metal by physical vapour deposition over the discontinuous layer (18) in the opening (100), and reflowing the further amount of metal to obtain the metal-filled structure. The interior surface of the opening is preferably a conductive material such as titanium nitride (20). Preferably, the discontinuous metal layer (18) is made of aluminum. The metal deposited by PVD is preferably aluminum or an aluminum alloy. The methods of the invention are especially useful for the filling of contact holes, damascene trenches and dual damascene trenches. The methods of the invention are especially useful for filling structures having an opening width less than 250nm.