METHOD FOR PRODUCING DIAMOND FILMS USING A VAPOUR-PHASE SYNTHESIS SYSTEM

This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission properties. Diamond films are formed on the substrate in the gas mixture of hydrogen and carbon containing gas with last one concentration 2-10% mixture through protective grid screen is being placed between the substrate and the metal filament under the preliminary heating of the filament up to 1800-2800 C, of the substrate 650 - 900 C in the hydrogen flow, after growing a diamond film up to selected thickness the surplus of graphite phase is removed. The methane could be used as the carbon containing gas with the concentration 2-8% at the gas flow. For the case of the silicon substrate the reactor is first filled with the hydrogen flow to remove a natural silicon oxide within the temperature ranges of the metal filament and the substrate necessary for film deposition, a silicon carbide layer on the substrate is formed by introducing a methane with the concentration 5-20% into the gas flow during 4-20 minutes, after diamond film deposition under the methane in the gas flow 2-8% the surplus of graphite phase is removed during 3-10 in the hydrogen flow.