HIGH DENSITY TRENCH DMOS TRANSISTOR WITH TRENCH BOTTOM IMPLANT

A DMOS transistor structure comprising: a substrate (50); a drift region (54) overlying the substrate; a body region (56) overlying the drift region (54); a conductive gate electrode (64) extending in a trench (62) from the principal surface through the body region (56) and into the drift region (54...

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Bibliographische Detailangaben
Hauptverfasser:	CHANG, MIKE, NG, DANIEL, FLOYD, BRIAN, H, HSHIEH, FWU-IUAN, NIM, DANNY
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A DMOS transistor structure comprising: a substrate (50); a drift region (54) overlying the substrate; a body region (56) overlying the drift region (54); a conductive gate electrode (64) extending in a trench (62) from the principal surface through the body region (56) and into the drift region (54) to a depth less than that of the body region (56), the body region including a channel portion in contact with a side of the trench (62) near the principal surface and a deep body portion (57) more heavily doped than the channel portion extending into the drift region (54) and spaced apart from a side of the trench (62); a source region (58) extending into the body region (56); and a trench bottom region (70) of the same conductivity type as and of a higher doping concentration than the drift region (54), and extending from a bottom of the trench (62) into the drift region (54) as deeply as the deep body portion (57) and spaced apart from the body region (56).