A process for fabricating a device with shallow junctions

A process for device fabrication in which transient enhanced diffusion (TED) is used to obtain a desired distribution of dopant in a crystalline substrate is disclosed. In the process, both a dopant and a non-dopant are introduced into the same region of a substrate. The diffusion of the dopant in the substrate during a subsequent thermal anneal is affected by the non-dopant. The amount of non-dopant introduced into the substrate is selected to obtain, in conjunction with the subsequent thermal anneal, the desired distribution of dopant in the substrate. The concentration of the non-dopant is in the range of about 6 x 10 atoms/cm to about 3 x 10 atoms/cm . The substrate is then annealed at a temperature in the range of about 700 DEG C to about 950 DEG C to obtain the desired dopant profile.