Reactor for chemical vapour phase deposition

A reactor is described where the substrates (W) subjected to the deposition process are maintained in a substantially vertical position and are imparted a relative motion with respect to the nozzles (26) whence the carrier gas that carries the deposition reactants exits. Preferably the reactor presents an altogether cylindrical shape, with the substrates (W) mounted on a carousel structure (7) rotating around a main axis (X8) coinciding with the main axis of the case of the reactor. The diffusion of the carrier gas and of the reactants is effected starting from a head (11) which projects from the vault of the case of the reactor and which extends inside the carousel structure (7) where the substrates (W) are mounted. The head (11) presents a plurality of nozzles (26), uniformly distributed on its periphery, for the release of the carrier gas and of the reactants borne thereby. Preferred application for the deposition of semiconductors starting from metal-organic reactants in vapour phase, in particular for integrated optics applications.