Temperature correlated voltage generator circuit and corresponding voltage regulator for a single power memory cell, particularly of the FLASH-type

The invention relates to a temperature-related voltage generating circuit having an input terminal (15) receiving a control voltage (VBG) independent of temperature, and an output terminal (16) delivering a temperature-related control voltage (Vout), the input and output terminals (15, 16) being con...

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Bibliographische Detailangaben
Hauptverfasser: MULATTI, JACOPO, CARRERA, MARCELLO, ZAMMATTIO, MATTEO, GHILARDELLI, ANDREA
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:The invention relates to a temperature-related voltage generating circuit having an input terminal (15) receiving a control voltage (VBG) independent of temperature, and an output terminal (16) delivering a temperature-related control voltage (Vout), the input and output terminals (15, 16) being connected together through at least an amplifier stage (19) adapted to set an output reference voltage from a comparison of input voltages, and comprising a generator element (T1) generating a Varying voltage (VBE) with temperature connected between a ground voltage reference (GND) and a non-inverting input terminal of the amplifier stage (19), which has an output terminal adapted to deliver a multiple of the varying voltage (VBE) with temperature to an inverting input terminal of a comparator stage (18); the comparator stage (18) has its output connected to the temperature-related voltage generating circuit (14) and a non-inverting input terminal receiving the control voltage (VBG) independent of temperature to evaluate the difference between the control voltage (VBG) independent of temperature and said voltage being a multiple of the varying voltage (VBE) with temperature and to output a temperature-related control voltage (Vout) having at room temperature a mean value which is independent of its thermal differential ( delta Vout/ delta T) and increases with temperature. The invention also relates to a regulator for a drain voltage (Vd) of a single-supply memory cell (M1), comprising a temperature-related voltage generating circuit (14) according to the invention.