DOPANT PROFILE SPREADING FOR ARSENIC SOURCE/DRAIN

An improved process for forming shallow arsenic-doped source/drain regions in MOS devices utilizes a two-step arsenic implant which lowers the surface arsenic concentration while maintaining sharp junction profile and desired junction depth. Minimizing the excess arsenic in the surface region improv...

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Bibliographische Detailangaben
1. Verfasser:	TRIPSAS, NICHOLAS, H
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CUTTING CUTTING-OUT ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HAND CUTTING TOOLS PERFORATING PERFORMING OPERATIONS PUNCHING SEMICONDUCTOR DEVICES SEVERING SEVERING BY MEANS OTHER THAN CUTTING STAMPING-OUT TRANSPORTING
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Zusammenfassung:	An improved process for forming shallow arsenic-doped source/drain regions in MOS devices utilizes a two-step arsenic implant which lowers the surface arsenic concentration while maintaining sharp junction profile and desired junction depth. Minimizing the excess arsenic in the surface region improves silicidation characteristics.