Soft passivation layer in semiconductor fabrication

The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch layer allows the size of the terminal via opening to be decoupled from the resolution capabilities of current photosensitive soft-passivation...

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Bibliographische Detailangaben
Hauptverfasser: DINKEL, BETTINA, NARAYAN, CHANDRASEKHAR
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch layer allows the size of the terminal via opening to be decoupled from the resolution capabilities of current photosensitive soft-passivation layer.