Soft passivation layer in semiconductor fabrication
The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch layer allows the size of the terminal via opening to be decoupled from the resolution capabilities of current photosensitive soft-passivation...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch layer allows the size of the terminal via opening to be decoupled from the resolution capabilities of current photosensitive soft-passivation layer. |
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