Dram cell capacitor and method for manufacturing the same

A DRAM cell capacitor is provided wherein a capacitor bottom electrode (110a) has an HSG (Hemi-Spherical Grain) layer (115) formed thereon so as to increase capacitance of the capacitor. In the DRAM cell capacitor, the capacitor bottom electrode (110a) has an angled shape at a top edge thereof, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN, MIN-SEOG, SHIN, JIUL, LEE, HYUNG-SEOK, NAM, SEOK-WOO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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