Process for producing polycrystalline semiconductor

A process and apparatus for producing a high-quality polycrystalline semiconductor ingot with excellent crystallographic properties are disclosed. The interior of an airtight vessel (1) is kept in an inert atmosphere for semiconductors. A raw semiconductor material (17) is charged in a crucible (9),...

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Bibliographische Detailangaben
1. Verfasser:	OKUNO, TETSUHIRO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A process and apparatus for producing a high-quality polycrystalline semiconductor ingot with excellent crystallographic properties are disclosed. The interior of an airtight vessel (1) is kept in an inert atmosphere for semiconductors. A raw semiconductor material (17) is charged in a crucible (9), and the raw semiconductor material (17) is heated by an induction heating coil (5) so as to be melted. Then the bottom of the crucible is deprived of heat for causing the raw semiconductor material (17) to solidify, thereby producing a polycrystalline semiconductor. The semiconductor crystal grows in one direction from the bottom to the top of the crucible while the heat emission is changed in accordance with a predetermined relationship for keeping the solidification rate of the raw semiconductor material (17) constant.